Gallium Antimonide (GaAs) is used as a substrate material for the epitaxial growth of heterostructures, which are harnessed for optoelectronic applications. The lattice constant of GaSb matches well with various ternary, quaternary, and III-V compound solid solutions whose bandgap covers 0.8–4.3 μm, which makes it a good substrate material used in infrared optical fiber transmission. With higher lattice-restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave. 

Shanghai North Optics offers custom GaSb crystals and substrates according to the customer’s request, the maximum diameter of 3” is available. Three types of GaSb materials: non-doping, Zinc (Zn) doped and Tellurium (Te) doped GaSb are offered. All substrates are stringently tested and packed in class 1000 clean room and class 100 bags.